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The DDTA114GKA-7-F is a PNP pre-biased small signal surface mount transistor manufactured by Diodes Incorporated. It features an epitaxial planar die construction and includes a built-in biasing resistor R2 with a nominal value of 10 kΩ. The device operates within a collector-emitter voltage range of -50 V and supports a continuous collector current of -100 mA, with a power dissipation rating of 200 mW. Packaged in the SC-59 (SOT-363) case, it functions across a temperature range of -55°C to +150°C. Key electrical characteristics include a DC current transfer ratio (hFE) minimum of 30 at -5mA/-5V and a gain-bandwidth product of 250 MHz.
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm the specific ordering suffix matches the required packaging configuration. Ensure compliance with environmental regulations relevant to your region. Check for recent manufacturing date codes if halogen-free status is critical for your assembly process.
Select this component when a PNP pre-biased transistor with a 10 kΩ internal emitter resistor is required. Compare against the DDTC114GKA series for complementary NPN requirements. Verify that the SC-59 package dimensions fit the available PCB footprint. Ensure the -50 V voltage rating meets the maximum operating conditions of the target application.
This part belongs to the DDTA(R2-only Series) KA family from Diodes Incorporated. It is specifically designed as a PNP variant within the broader digital transistor portfolio. The 'KA' designation indicates the SC-59 package type and the specific 10 kΩ resistor value. It serves as a discrete solution for replacing external resistor networks in transistor switching applications.
Direct functional equivalents include other DDTA114 variants with different packages or resistor values. Cross-reference with DDTC114GKA for NPN polarity needs. Verify pinout compatibility when substituting with components from other manufacturers offering similar SC-59 pre-biased transistors.