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The DDTA114TE-7-F is a PNP pre-biased transistor from Diodes Incorporated, housed in an SOT-523 package. It features a built-in base resistor (R1) of 10 kOhms nominal value. The device supports a maximum collector-emitter voltage (VCEO) of -50 V and a continuous collector current of 100 mA. Power dissipation is rated at 150 mW with a thermal resistance of 833 °C/W. DC current gain (hFE) ranges from 100 to 600 at IC = -1mA, VCE = -5V. Transition frequency is typically 250 MHz. Operating temperature spans from -55°C to +150°C.
Verify the specific ordering suffix matches the required reel size and tape width specifications. Confirm compliance requirements such as RoHS 3 and lead-free status against project constraints. Ensure the marking code corresponds to the intended production date code range. Validate that the SOT-523 package dimensions align with the PCB footprint layout before finalizing procurement orders.
Select this component when a PNP configuration with a 10 kOhm base resistor is required. Compare against complementary NPN types like DDTC114TE if polarity inversion is needed. Consider the 150 mW power dissipation limit and thermal resistance for heat management. Verify the -50 V voltage rating suits the target application's supply rails.
This part belongs to the DDTA R1-Only Series E family, which includes various resistor values ranging from 1kΩ to 200kΩ. It shares the same SOT-523 mechanical outline and electrical characteristics structure as other members like DDTA113TE or DDTA124TE, differing primarily in the nominal resistance value of the integrated base resistor.
DDTA114TUA-7-F offers similar electrical parameters but utilizes an SOT-323 package instead of SOT-523. Verify pinout compatibility and physical footprint differences before substitution.