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The DDTA114TUA-7-F is a PNP pre-biased transistor manufactured by Diodes Incorporated, housed in an SOT-323 surface-mount package. It features a built-in base resistor (R1) with a nominal value of 10 kOhms and a tolerance of ±30%. The device supports a maximum collector-emitter voltage (VCEO) of -50 V and a continuous collector current (IC) of -100 mA. Electrical characteristics include a minimum DC current gain (hFE) of 100 at IC = -1mA and VCE = -5V, and a typical gain-bandwidth product (fT) of 250 MHz. Power dissipation is rated at 200 mW, with an operating temperature range from -55°C to +150°C.
Verify the specific ordering suffix '-7-F' against official manufacturer documentation to confirm compliance with RoHS 3 directives and lead-free specifications. Confirm that the 'Standard' marking code corresponds to the required production lot traceability. Ensure procurement channels are authorized to guarantee adherence to standard terms and conditions.
Select this component when a PNP configuration with a 10 kOhm base resistor is required within an SOT-323 footprint. Verify that the -50 V voltage rating and -100 mA current capacity meet the load requirements. Consider the thermal resistance of 625 °C/W and power dissipation limits during high-temperature operation.
This part belongs to the DDTA R1-Only Series UA family from Diodes Incorporated. It serves as the PNP counterpart to the DDTC NPN series. The '114' designation specifically indicates the 10 kOhm internal resistor value, distinguishing it from other variants like the DDTA113TUA (1 kOhm) or DDTA124TUA (22 kOhm).
Direct functional substitutes within the same series include DDTA113TUA-7-F and DDTA124TUA-7-F, provided the different internal resistor values are acceptable for the application. Complementary NPN equivalents are available in the DDTC series.