SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The DDTA114WCA-7-F is a PNP pre-biased transistor from Diodes Incorporated, housed in an SOT23 package. It integrates two biasing resistors with values of R1 = 10 kΩ and R2 = 4.7 kΩ. The device supports a maximum supply voltage (VCC) of -50 V and a continuous collector current (IC) of -100 mA. Power dissipation is rated at 200 mW, with a thermal resistance (RθJA) of 625 °C/W. The DC current gain (hFE) has a minimum value of 24, and the gain-bandwidth product (fT) reaches 250 MHz. Operating temperatures range from -55°C to +150°C.
Verify the specific ordering suffix '-7-F' corresponds to the standard 3,000-unit reel packaging configuration as documented in the manufacturer's official datasheet. Confirm that the component meets RoHS 3 and halogen-free requirements if environmental compliance is mandatory for the intended deployment environment.
Select this component when a PNP digital transistor with a 10 kΩ base resistor and 4.7 kΩ emitter resistor is required. Ensure the application voltage does not exceed the -50 V limit and that the thermal management strategy accommodates the 200 mW power dissipation rating within the specified operating temperature range.
This part belongs to the DDTA (R1≠R2 SERIES) CA family of pre-biased transistors manufactured by Diodes Incorporated. The 'CA' designation indicates the SOT23 package type. The series provides complementary NPN types under the DDTC naming convention, allowing for matched PNP/NPN pairs in push-pull or differential configurations.
Direct substitutes include other DDTA114WCA variants from Diodes Incorporated. Cross-manufacturer replacements must match the SOT23 footprint, PNP polarity, -50 V rating, -100 mA current capacity, and the specific 10 kΩ/4.7 kΩ resistor ratio.