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The DDTA114WE-7-F is a PNP pre-biased small signal surface mount transistor manufactured by Diodes Incorporated. It features an epitaxial planar die construction and integrates internal biasing resistors with nominal values of R1 = 10 kΩ and R2 = 4.7 kΩ. The device operates within a supply voltage range up to -50 V and supports a continuous collector current of -100 mA. Power dissipation is rated at 150 mW, with a thermal resistance of 833 °C/W. It functions reliably across an operating temperature range of -55°C to +150°C and meets AEC-Q101 standards for high reliability.
Verify the specific ordering suffix '-7-F' corresponds to the required reel size and tape width configuration. Confirm compliance with RoHS 2 and RoHS 3 directives if environmental regulations apply to the assembly process. Ensure the SOT523 package dimensions align with the designated PCB footprint and solder mask layout specifications.
Select this component when a PNP transistor with unequal biasing resistors is required. The 10 kΩ input resistor and 4.7 kΩ emitter resistor ratio defines the specific drive characteristics. Compare against other DDTA114 variants if different resistance ratios or NPN polarity are needed. Verify power dissipation limits relative to ambient temperature conditions.
This part belongs to the DDTA series of pre-biased transistors from Diodes Incorporated. It is specifically the WE variant within the R1≠R2 subgroup, distinguished by its unique resistor combination. The series offers complementary NPN types under the DDTC designation. Packaging is provided in reels of 3,000 units for automated surface mount assembly.
Direct substitutes include other DDTA114WE variants from Diodes Incorporated. Cross-manufacturer equivalents must match the SOT523 package, PNP polarity, and identical 10kΩ/4.7kΩ resistor values. Verify electrical parameters such as VCEO and IC ratings before substitution.