SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The DDTA114WUA-7-F is a PNP pre-biased small signal surface mount transistor from Diodes Incorporated, housed in an SOT-323 package. It features built-in biasing resistors with nominal values of R1 = 10 kΩ and R2 = 10 kΩ. The device supports a supply voltage (VCC) of -50 V and a continuous collector current (IC) of -100 mA. Power dissipation is rated at 200 mW, with a thermal resistance (RθJA) of 625 °C/W. Operating and storage temperatures range from -55°C to +150°C. The DC current gain (hFE) minimum is 24 at VO = -5V and IO = -10mA.
Verify the component marking code 'P15' on the physical device to confirm it matches the DDTA114WUA-7-F specification sheet. Ensure the ordering suffix '-7-F' corresponds to the tape and reel packaging format containing 3000 units per reel. Confirm RoHS compliance status if manufacturing dates precede the specified date code thresholds.
Select this component when a PNP configuration with specific 10kΩ/10kΩ resistor ratios is required. Compare against the DDTC114WUA-7-F for NPN alternatives within the same series. Consider the SOT-323 package dimensions and thermal characteristics relative to available board space and heat dissipation requirements.
This part belongs to the DDTA (R1≠R2 SERIES) UA family of pre-biased transistors. It serves as the complement to the DDTC series NPN types. The device integrates discrete resistors into a single semiconductor package to reduce external component count and PCB area.
Direct substitutes include other DDTA114 variants with different resistor values, such as DDTA114YUA-7-F or DDTA114EUA-7-F, provided the input impedance requirements match the application design.
The internal biasing resistors have nominal values of R1 = 10 kΩ and R2 = 10 kΩ.
The maximum power dissipation (Pd) is rated at 200 mW.
Yes, the gain-bandwidth product (fT) is typically 250 MHz under standard test conditions.