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The DDTA114YLP-7 is a single PNP pre-biased small signal transistor manufactured by Diodes Incorporated. It features an epitaxial planar die construction housed in an X1-DFN1006-3 leadless surface mount package. The device integrates a 10 kΩ base resistor (R1) and a 47 kΩ emitter resistor (R2), yielding a nominal resistance ratio of 4.7. Key electrical specifications include a collector-emitter breakdown voltage of -50 V, a continuous collector current of -100 mA, and a power dissipation rating of 250 mW at +25°C. The component operates within a temperature range of -55°C to +150°C and exhibits a typical DC current gain (hFE) of 80 at -5 mA.
Verify the specific ordering suffix against official manufacturer documentation to ensure correct packaging quantity and tape width specifications. Confirm that the requested part number matches the exact marking code and reel size requirements for your manufacturing process. Cross-reference the datasheet revision date to ensure compatibility with current quality and environmental compliance standards.
Select this component when a compact PNP solution with integrated biasing resistors is required for space-constrained designs. Ensure the circuit design accommodates the -50 V maximum voltage rating and -100 mA current limit. Consider the thermal resistance characteristics and derating requirements if operating in environments exceeding +25°C ambient temperature.
This component belongs to the DDTA114 series of pre-biased transistors from Diodes Incorporated. The series offers various configurations including NPN and PNP types with different resistor values and packages. The YLP variant specifically denotes the X1-DFN1006-3 package format, distinguishing it from other form factors like SOT-323 or standard DFN packages within the same product family.
NSBC114YF3T5G from onsemi is identified as an available substitute option.