DDTA115EE-7-F

Overview

The DDTA115EE-7-F is a PNP pre-biased transistor from Diodes Incorporated, housed in an SOT523 package. It features built-in biasing resistors with R1 equal to R2, both nominally 100 kΩ. The device supports a supply voltage of 50 V and a maximum output current of -20 mA. Power dissipation is rated at 150 mW, with an operating temperature range spanning from -55°C to +150°C. The transition frequency is typically 250 MHz, and the DC current gain minimum is -82 under specified conditions.

Feature Summary

• Integrates dual matched biasing resistors (R1 = R2) for simplified circuit design
• Utilizes epitaxial planar die construction for high reliability
• Complies with RoHS 3 standards and is halogen-free

Applications

• General-purpose switching applications
• Driver circuits for logic interfaces
• High-reliability electronic systems

Procurement Notes

Verify component authenticity by cross-referencing the manufacturer's part number against official datasheets. Confirm that the ordering suffix matches the required packaging specifications. Ensure compliance with environmental directives such as RoHS 3 before finalizing procurement orders.

Selection Notes

Select this component when a PNP configuration with equal internal biasing resistors is required. The 100 kΩ resistor value suits specific input impedance needs. Verify that the -20 mA output current capability aligns with the load requirements of the target application circuit.

Part Context

This component belongs to the DDTA series of pre-biased transistors manufactured by Diodes Incorporated. It represents the EE variant within the R1=R2 subgroup, specifically designed for compact surface-mount implementations using the SOT523 footprint.

Replacement Considerations

Direct replacements must maintain the PNP polarity, SOT523 package, and 100 kΩ dual resistor configuration. Verify thermal resistance and voltage ratings match or exceed the original specifications to ensure circuit compatibility.