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The DDTA115TE-7-F is a PNP pre-biased transistor from the DDTA (R1-only) series, manufactured by Diodes Incorporated. It features an epitaxial planar die construction housed in a SOT523 surface-mount package. The device integrates a single internal biasing resistor with a nominal value of 100 kΩ. Key electrical ratings include a collector-emitter voltage of -50 V, a continuous collector current of -100 mA, and a power dissipation capacity of 150 mW at 25°C ambient temperature. The DC current gain ranges from 100 to 600, with a typical transition frequency of 250 MHz. Operating temperatures span from -55°C to +150°C.
Verify compliance requirements against specific project standards, noting that this component is fully RoHS compliant and lead-free. Confirm packaging details such as reel size and tape width if ordering in bulk quantities. Ensure storage conditions account for the Level 1 moisture sensitivity rating per J-STD-020 before soldering processes are initiated.
Select this component when a PNP configuration with a 100 kΩ base resistor is required. Compare against the complementary NPN DDTC115TE-7-F for push-pull designs. Evaluate thermal resistance characteristics if operating near maximum junction temperatures or in enclosed environments without forced airflow.
This part belongs to the DDTA R1-only series, which offers various resistor values ranging from 1 kΩ to 200 kΩ. It shares the same SOT523 footprint and electrical ratings as other members like the DDTA114TE-7-F (10 kΩ) and DDTA123TE-7-F (2.2 kΩ), allowing for pin-compatible design flexibility across different input impedance needs.
Direct substitutes include other manufacturers' PNP pre-biased transistors in SOT-523 packages with similar -50V ratings and 100 kΩ internal resistors. Verify saturation voltage and current gain specifications match application requirements before substitution.