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The DDTA122TE-7 is a PNP pre-biased surface mount transistor from Diodes Incorporated, housed in an SOT-523 package. It features built-in biasing resistors with R1 nominal value of 0.22 kΩ and R2 open. Key electrical parameters include a maximum collector-emitter voltage (BVCEO) of -40 V, collector-base breakdown voltage (BVCBO) of -50 V, and emitter-base breakdown voltage (BVEBO) of -5 V. The device supports a continuous output current of -100 mA and power dissipation of 150 mW at 25°C ambient temperature. It operates within a junction temperature range of -55°C to +150°C.
Verify the specific ordering suffix matches the required packaging configuration. Confirm that the component meets all applicable environmental compliance standards relevant to the target market. Ensure the supplier provides valid traceability documentation for the manufacturing date code and type code markings found on the device casing.
Select this component when a PNP transistor with integrated base resistance is required in a small form factor. The DDTA122TE variant specifically offers an open R2 configuration, distinguishing it from models with parallel resistor networks. Verify that the -5V emitter-base breakdown voltage aligns with the input signal levels in the application circuit to prevent damage.
This part belongs to the DDTA series of pre-biased transistors manufactured by Diodes Incorporated. The series includes complementary NPN types designated as DDTC. The DDTA122TE-7-F designation indicates the specific resistor values and tape-and-reel packaging format. It serves as a discrete solution for replacing external resistor networks in transistor switching applications.
Direct substitutes include other DDTA122TE variants from Diodes Incorporated. Cross-brand replacements require matching the SOT-523 package, PNP polarity, and internal resistor values (R1=0.22kΩ, R2=open). Verify pinout compatibility and thermal characteristics before substitution.