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Product Detailed Parameters
- Description：TRANS PREBIAS PNP 200MW SOT323
- Series：*
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：-
- Transistor Type：-
- Current - Collector (Ic) (Max)：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Resistor - Base (R1)：-
- Resistor - Emitter Base (R2)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：-
- Vce Saturation (Max) @ Ib, Ic：-
- Current - Collector Cutoff (Max)：-
- Frequency - Transition：-
- Power - Max：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
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Overview
The DDTA122TU-7 is a PNP pre-biased transistor manufactured by Diodes Incorporated, housed in an SOT-323 surface-mount package. It features a built-in base resistor (R1) of 0.22 kΩ and an open emitter resistor (R2). The device supports a maximum collector-emitter voltage (BVCEO) of -40 V and a continuous collector current of -100 mA. Power dissipation is rated at 200 mW with a thermal resistance of 625 °C/W. Operating temperature ranges from -55°C to +150°C. DC current gain (hFE) typically spans 100 to 600 at IC = -1mA.
Feature Summary
- Integrates a single internal biasing resistor for simplified circuit design
- Utilizes epitaxial planar die construction for reliable performance
- Offers complementary NPN types within the same product family
Applications
- General-purpose switching applications
- Driver circuits for low-power loads
- Logic level translation interfaces
Procurement Notes
This component is officially discontinued and obsolete. Verify availability through authorized distributors or secondary markets. Confirm manufacturing date codes and RoHS compliance status, as early production runs may utilize non-green molding compounds containing halogens or flame retardants prior to the specified date code threshold.
Selection Notes
Select this part when a PNP digital transistor with a low nominal base resistance of 0.22 kΩ is required. Ensure the application operates within the -40 V collector-emitter breakdown limit and -100 mA current constraints. Consider the DDTA122LU variant if a dual-resistor configuration is necessary instead of the single-resistor topology found in the TU suffix.
Part Context
The DDTA122TU-7 belongs to the DDTA series of PNP pre-biased transistors produced by Diodes Incorporated. This series provides integrated biasing solutions to reduce external component count. The specific TU designation indicates a single internal resistor configuration, distinguishing it from LU variants that include both base and emitter resistors.
Replacement Considerations
DDTA122LU-7-F
FAQ
What is the difference between the DDTA122TU and DDTA122LU?
The DDTA122TU features a single internal base resistor (R1) with an open emitter resistor (R2), whereas the DDTA122LU includes both a base resistor and an emitter resistor.
Is the DDTA122TU-7 currently in production?
No, the datasheet explicitly marks this part as obsolete and discontinued.
What is the typical DC current gain range?
The DC current transfer ratio (hFE) typically ranges from 100 to 600 when measured at IC = -1mA and VCE = -5V.
