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Product Detailed Parameters
- Description：TRANS PREBIAS PNP 200MW SOT23-3
- Series：*
- Mfr：Diodes Incorporated
- Package：Cut Tape (CT)
- Resistors Included：-
- Transistor Type：-
- Current - Collector (Ic) (Max)：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Resistor - Base (R1)：-
- Resistor - Emitter Base (R2)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：-
- Vce Saturation (Max) @ Ib, Ic：-
- Current - Collector Cutoff (Max)：-
- Frequency - Transition：-
- Power - Max：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
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Overview
The DDTA123ECA-7-F is a single PNP digital transistor manufactured by Diodes Incorporated, housed in an SOT-23-3 surface-mount package. It integrates a built-in bias resistor network with a typical input resistance of 2.2 kOhms and a resistor ratio of 1. The device supports a continuous collector current of -100 mA and a peak DC collector current of 100 mA. It features a minimum DC current gain (hFE) of 20 and operates within a temperature range of -55°C to +150°C. The maximum power dissipation is rated at 200 mW.
Feature Summary
- Integrates a single PNP transistor with a pre-biased internal resistor network for simplified circuit design.
- Utilizes an SOT-23-3 surface-mount package suitable for automated assembly processes.
- Designed for high reliability with operation up to a maximum junction temperature of 150°C.
Applications
- General-purpose switching applications in consumer electronics.
- Driver circuits for low-power loads requiring pre-biased control.
- Logic level translation and interface buffering in embedded systems.
Procurement Notes
Verify the specific suffix against official documentation, as the provided data references the DDTA123ECA-7-F variant. Confirm RoHS compliance status and lead times directly with authorized distributors or the manufacturer, as availability and packaging formats may vary by region and production batch.
Selection Notes
Select this component when a compact PNP solution with integrated base biasing is required. Ensure the 2.2 kOhm input resistance aligns with the driving source impedance. Verify that the 200 mW power dissipation rating is sufficient for the intended thermal environment and duty cycle.
Part Context
This part belongs to the DDTA series of pre-biased transistors from Diodes Incorporated. These devices combine NPN or PNP transistors with resistive networks to reduce board space and component count compared to discrete implementations.
Replacement Considerations
Cross-reference with other DDTA123 variants such as DDTA123JCA-7-F or DDTA123TCA-7-F if different hFE gains are needed. Verify pinout compatibility and electrical ratings before substituting with parts from other manufacturers.
