DDTA123EE-7-F

DDTA123EE-7-F

$0.05
  • Description:TRANS PREBIAS PNP 50V SOT523
  • Series:-

SKU:376a2b01a709 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS PNP 50V SOT523
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR)
  • Resistors Included:R1 and R2
  • Transistor Type:PNP - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):2.2 kOhms
  • Resistor - Emitter Base (R2):2.2 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:20 @ 20mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:250 MHz
  • Power - Max:150 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-523
  • Supplier Device Package:SOT-523

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DDTA123EE-7-F

Overview

The DDTA123EE-7-F is a single PNP pre-biased transistor manufactured by Diodes Incorporated, housed in an SOT523 surface-mount package. It features built-in biasing resistors with equal values (R1 = R2) of 2.2 kΩ nominal. The device supports a supply voltage (VCC) of up to 50 V and a continuous collector current of -100 mA. Power dissipation is rated at 150 mW, with an operating temperature range spanning from -55°C to +150°C. The component utilizes epitaxial planar die construction and meets JEDEC standards for high reliability.

Feature Summary

  • Epitaxial planar die construction for robust performance
  • Integrated dual biasing resistors with a 1:1 ratio
  • Qualified to JEDEC standards for high reliability applications

Applications

  • General-purpose switching circuits
  • Driver stages for logic interfaces
  • Level shifting between different voltage domains

Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to ensure correct packaging and marking codes. Confirm that the procurement channel is authorized to guarantee compliance with RoHS directives and lead-free manufacturing standards. Cross-reference the date code markings on received units with the manufacturer's key to validate production timelines.

Selection Notes

Select this component when a compact PNP solution with integrated base and emitter resistors is required. The 2.2 kΩ resistor configuration suits applications needing moderate input drive currents. Ensure the design accommodates the specified -100 mA output current limit and 150 mW power dissipation constraints within the target thermal environment.

Part Context

This part belongs to the DDTA1xxEE series of pre-biased transistors from Diodes Incorporated. It serves as the PNP counterpart to the DDTC1xxEE NPN series. The 'EE' designation indicates the specific resistor value combination and SOT523 package type within the broader product family.

Replacement Considerations

Direct substitutes include other DDTA123 variants from Diodes Incorporated or equivalent parts from manufacturers offering PNP pre-biased transistors in SOT523 packages with identical 2.2 kΩ internal resistance ratios.

DDTA123EE-7-FDDTA123EE-7-F
$0.05
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