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The DDTA123EE-7-F is a single PNP pre-biased transistor manufactured by Diodes Incorporated, housed in an SOT523 surface-mount package. It features built-in biasing resistors with equal values (R1 = R2) of 2.2 kΩ nominal. The device supports a supply voltage (VCC) of up to 50 V and a continuous collector current of -100 mA. Power dissipation is rated at 150 mW, with an operating temperature range spanning from -55°C to +150°C. The component utilizes epitaxial planar die construction and meets JEDEC standards for high reliability.
Verify the specific ordering suffix against official manufacturer documentation to ensure correct packaging and marking codes. Confirm that the procurement channel is authorized to guarantee compliance with RoHS directives and lead-free manufacturing standards. Cross-reference the date code markings on received units with the manufacturer's key to validate production timelines.
Select this component when a compact PNP solution with integrated base and emitter resistors is required. The 2.2 kΩ resistor configuration suits applications needing moderate input drive currents. Ensure the design accommodates the specified -100 mA output current limit and 150 mW power dissipation constraints within the target thermal environment.
This part belongs to the DDTA1xxEE series of pre-biased transistors from Diodes Incorporated. It serves as the PNP counterpart to the DDTC1xxEE NPN series. The 'EE' designation indicates the specific resistor value combination and SOT523 package type within the broader product family.
Direct substitutes include other DDTA123 variants from Diodes Incorporated or equivalent parts from manufacturers offering PNP pre-biased transistors in SOT523 packages with identical 2.2 kΩ internal resistance ratios.