DDTA123JE-7-F

Overview

The DDTA123JE-7-F is a PNP pre-biased small signal surface mount transistor manufactured by Diodes Incorporated. It features an epitaxial planar die construction housed in an SOT523 package. The device integrates internal biasing resistors with nominal values of R1 = 2.2 kΩ and R2 = 47 kΩ. Key electrical specifications include a maximum collector-emitter voltage (VCEO) of -50 V, a continuous collector current (IC) of -100 mA, and a power dissipation (PD) of 150 mW at 25°C ambient temperature. The DC current gain (hFE) has a minimum value of 80 at IC = -10 mA and VCE = -5 V. The transition frequency (fT) is typically 250 MHz. Operating and storage temperatures range from -55°C to +150°C.

Feature Summary

• Integrates two distinct biasing resistors (R1 ≠ R2) within a single compact surface-mount package to simplify circuit design.
• Constructed using epitaxial planar die technology for reliable performance.
• Qualified to AEC-Q101 standards to ensure high reliability for automotive applications.
• Manufactured as a totally lead-free, halogen-free, and antimony-free "Green" device compliant with RoHS directives.

Applications

• Switching applications in portable devices such as mobile phones and PDAs.
• Driver circuits for relays and solenoids.
• Logic level shifting and interface circuits between digital components.
• General-purpose switching in consumer electronics and industrial control systems.

Procurement Notes

Verify the specific ordering suffix '-7-F' corresponds to the 3,000-unit reel packaging configuration on a 7-inch tape with 8mm width. Confirm that the marking code 'P06' matches the required identification for production traceability. Ensure compliance requirements for AEC-Q101 qualification are met if the application demands automotive-grade reliability standards.

Selection Notes

Select this component when a PNP pre-biased transistor with a 2.2 kΩ base resistor and 47 kΩ emitter resistor is required. The SOT523 package is suitable for space-constrained designs. Consider the 150 mW power dissipation limit and the -50 V voltage rating during thermal and electrical stress analysis. Verify that the 80 minimum hFE meets the drive requirements of the target load.

Part Context

This part belongs to the DDTA(R1≠R2) Series E family of PNP pre-biased transistors. It is the complementary counterpart to the DDTC123JE-7-F NPN type. The series offers various resistor combinations to accommodate different input impedance needs without external components. The 'E' suffix denotes the specific resistor ratio configuration within the broader DDTA product line.

Replacement Considerations

DDTC123JE-7-F (Complementary NPN type)

FAQ

What are the nominal values of the built-in resistors?

The typical internal resistor values are R1 = 2.2 kΩ and R2 = 47 kΩ.

Is this component qualified for automotive use?

Yes, the DDTA123JE-7-F is qualified to AEC-Q101 standards for high reliability.

What is the maximum power dissipation?

The maximum power dissipation is 150 mW when mounted on an FR4 PC board with minimum recommended pad layout at 25°C ambient temperature.