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The DDTA123TE-7-F is a PNP pre-biased transistor manufactured by Diodes Incorporated, housed in an SOT523 surface-mount package. It features an epitaxial planar die construction with a built-in base resistor (R1) of 2.2 kΩ nominal value. The device supports a collector-emitter voltage (VCEO) of -50 V and a continuous collector current of -100 mA. Electrical characteristics include a minimum DC current gain (hFE) of 100 at IC = -1mA and VCE = -5V, and a transition frequency (fT) of 250 MHz. Power dissipation is rated at 150 mW, with an operating temperature range from -55°C to +150°C.
Verify the specific ordering suffix '-7-F' corresponds to the standard reel packaging configuration containing 3000 units per reel as documented in the manufacturer's ordering information table. Confirm that the marking code 'P03' matches the physical component received to ensure authenticity and correct part identification during assembly.
Select this component when a PNP pre-biased transistor with a 2.2 kΩ internal base resistor is required in an SOT523 footprint. Ensure the application voltage does not exceed the -50 V collector-emitter rating and that the thermal environment allows for 150 mW power dissipation within the specified junction temperature limits.
This part belongs to the DDTA R1-only series of pre-biased transistors from Diodes Incorporated. It is functionally complementary to the DDTC series NPN types. The device is designed for space-saving applications where external biasing resistors are omitted to reduce board area and component count.
Direct replacements must match the SOT523 package, PNP polarity, 2.2 kΩ internal resistor, and -50 V / -100 mA ratings. Verify pinout compatibility and electrical parameters against the original datasheet specifications before substitution.