DDTA123TKA-7-F

DDTA123TKA-7-F

  • Description:TRANS PREBIAS PNP 50V SC59-3
  • Series:-

SKU:15afeaf57b07 Category: Brand:

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Product Detailed Parameters

  • Description:TRANS PREBIAS PNP 50V SC59-3
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR)
  • Resistors Included:R1 Only
  • Transistor Type:PNP - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):2.2 kOhms
  • Resistor - Emitter Base (R2):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 500µA, 5mA
  • Current - Collector Cutoff (Max):500nA (ICBO)
  • Frequency - Transition:250 MHz
  • Power - Max:200 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SC-59-3

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DDTA123TKA-7-F

Overview

The DDTA123TKA-7-F is a PNP pre-biased small signal surface mount transistor from Diodes Incorporated, housed in an SC-59 (SOT-23) package. It integrates a single internal biasing resistor (R1) with a nominal value of 2.2 kΩ. Key electrical parameters include a collector-emitter voltage (VCEO) of -50 V, a continuous collector current (IC) of -100 mA, and a power dissipation (Pd) of 200 mW at 25°C ambient temperature. The device features a minimum DC current gain (hFE) of 100 at IC = -1mA and VCE = -5V, with a typical transition frequency (fT) of 250 MHz. Operating temperatures range from -55°C to +150°C.

Feature Summary

  • Integrates a single built-in base biasing resistor (R1 only) to simplify circuit design and reduce component count.
  • Utilizes epitaxial planar die construction for reliable performance in surface mount applications.
  • Offers complementary NPN types within the same series for flexible design options.

Applications

  • General-purpose switching applications requiring simplified bias networks.
  • Driver circuits for low-power loads where space constraints favor SMD packaging.
  • Logic interface circuits utilizing integrated biasing for level shifting or buffering.

Procurement Notes

Verify the specific ordering suffix against official Diodes Incorporated documentation to confirm packaging details and compliance status. Ensure that the SC-59 package dimensions align with the target PCB footprint layout. Confirm RoHS and halogen-free status requirements match the manufacturing date code specifications provided in the datasheet notes.

Selection Notes

Select this component when a PNP digital transistor with a 2.2 kΩ base resistor is required. Compare the -50 V voltage rating and -100 mA current limit against circuit demands. Consider the thermal resistance and power dissipation limits for high-temperature environments. Verify compatibility with complementary NPN devices if push-pull configurations are needed.

Part Context

This part belongs to the DDTA1x3xCA KA series of PNP pre-biased transistors manufactured by Diodes Incorporated. The series is characterized by the integration of a single base resistor (R1) within an SC-59 package. Other members in this family include variants with different resistor values such as DDTA113TKA and DDTA143TKA, offering design flexibility for various biasing needs.

Replacement Considerations

Complementary NPN versions like DDTC123TKA-7-F are available within the same series. Cross-reference with other manufacturers' PNP digital transistors having identical pinouts, voltage ratings, and 2.2 kΩ internal resistance for potential substitutes.

FAQ

What is the function of the internal resistor in the DDTA123TKA-7-F?

The device includes a single built-in biasing resistor (R1) with a nominal value of 2.2 kΩ connected to the base terminal.

What is the maximum collector-emitter voltage for this transistor?

The maximum collector-emitter voltage (VCEO) is rated at -50 V.

Does this component contain an emitter resistor (R2)?

No, the DDTA123TKA-7-F is part of the R1-only series and does not include an internal emitter resistor.

DDTA123TKA-7-FDDTA123TKA-7-F

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