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The DDTA123TUA-7-F is a PNP pre-biased transistor from Diodes Incorporated, housed in an SOT-323 package. It features a built-in biasing resistor (R1) of 2.2 kΩ. The device supports a maximum collector-emitter voltage (VCEO) of -50 V and a continuous collector current (IC) of -100 mA. Power dissipation is rated at 200 mW with a thermal resistance of 625 °C/W. DC current gain (hFE) ranges from 100 to 600 at IC = -1 mA and VCE = -5 V. The saturation voltage (VCE(sat)) is typically -0.3 V under specified test conditions. Operating and storage temperatures span from -55 °C to +150 °C.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm compliance status and marking codes. Confirm that the component meets all relevant environmental directives required for the target application before finalizing procurement decisions.
Select this component when a PNP digital transistor with a 2.2 kΩ base resistor is required in an SOT-323 footprint. Ensure the application voltage does not exceed the -50 V collector-emitter rating and that the current requirements remain within the -100 mA limit.
This part belongs to the DDTA R1-only series from Diodes Incorporated. It is designed as a complement to NPN types within the same family. The device is intended for general-purpose switching and logic applications where space-saving surface mount technology is preferred.
Check for direct pin-compatible alternatives within the same manufacturer's portfolio. Verify that any substitute maintains identical electrical characteristics, specifically the -50 V voltage rating and 2.2 kΩ internal resistance.