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The DDTA124TE-7-F is a PNP pre-biased transistor from Diodes Incorporated, housed in an SOT523 package. It features an epitaxial planar die construction with a single built-in biasing resistor (R1) of 22 kΩ nominal value. The device supports a collector-emitter voltage (VCEO) of -50 V and a continuous collector current of -100 mA. Maximum power dissipation is rated at 150 mW, with a thermal resistance (RθJA) of 833 °C/W. Operating and storage temperatures range from -55°C to +150°C. DC current gain (hFE) ranges from 100 to 600 at IC = -1mA, VCE = -5V, while the transition frequency (fT) is typically 250 MHz.
Verify the specific ordering suffix against official documentation to confirm packaging details such as reel size and tape width. Confirm compliance requirements including RoHS 3 and halogen-free status directly with the manufacturer or authorized distributors before procurement. Ensure the component marking code matches the expected standard for this part number.
Select the DDTA124TE-7-F when a PNP pre-biased transistor with a 22 kΩ base resistor is required in an SOT523 package. Consider the -50 V collector-emitter voltage rating and -100 mA current capability for appropriate load matching. Verify that the 150 mW power dissipation limit aligns with the thermal management strategy of the target application environment.
This component belongs to the DDTA R1-ONLY SERIES E family manufactured by Diodes Incorporated. It is specifically designed as a PNP pre-biased transistor offering complementary NPN types within the DDTC series. The product line emphasizes compact surface-mount solutions with integrated biasing resistors to reduce board space and simplify external circuitry requirements.
Direct replacements within the same series include DDTA114TE-7-F (10 kΩ), DDTA144TE-7-F (47 kΩ), and DDTA123TE-7-F (2.2 kΩ). For complementary NPN functionality, consider the DDTC124TE-7-F. Ensure any substitute maintains the SOT523 package and similar electrical ratings.