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The DDTA125TE-7-F is a PNP pre-biased transistor in the R1-only series, housed in an SOT523 surface-mount package. It features an epitaxial planar die construction with a built-in biasing resistor (R1) of 200 kΩ nominal value. The device supports a maximum collector-emitter voltage (VCEO) of -50 V and a continuous collector current of -100 mA. Power dissipation is rated at 150 mW, with a thermal resistance (RθJA) of 833 °C/W. Operating temperature ranges from -55°C to +150°C. DC current gain (hFE) typically spans 250 to 600 at IC = -1mA.
Verify component status before procurement as this specific part number is listed as Obsolete in official documentation. Confirm availability through authorized distributors or secondary markets if active sourcing is required. Ensure compliance with environmental directives such as RoHS 3 when selecting alternatives.
Select this component for designs requiring a PNP digital transistor with a high-value base resistor. The 200 kΩ internal resistor suits applications needing minimal base drive current. Consider the SOT523 footprint constraints and thermal dissipation limits when integrating into dense PCB layouts.
This component belongs to the DDTA R1-only series by Diodes Incorporated. It complements the DDTC NPN series within the same family. The marking code for this device is P25. It utilizes a standard 3000-unit reel packaging format typical for surface-mount assembly lines.
Check for active equivalents in the DDTA12xTE-7-F series with different R1 values if stock is unavailable. Verify pinout compatibility with SOT523 packages. Consult manufacturer obsolescence notices for recommended long-term replacement strategies.