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The DDTA142JU-7-F is a PNP pre-biased transistor manufactured by Diodes Incorporated. It features an epitaxial planar die construction and integrates built-in biasing resistors within a compact SOT-323 surface-mount package. The device provides a collector-emitter breakdown voltage (BVCEO) of -40 V and supports a continuous collector current of -100 mA with a power dissipation rating of 200 mW. Internal resistor values are nominally R1 = 470 Ohms and R2 = 10 kOhms, yielding a typical DC current gain (hFE) of 100 at IC = -1mA. The component operates across a temperature range of -55°C to +150°C.
Verify the specific ordering suffix when sourcing components. The datasheet lists the DDTA142JU-7-F variant as obsolete and discontinued. Confirm availability status directly with the manufacturer or authorized distributors before procurement planning. Ensure compliance with RoHS standards and verify that the 'Green' molding compound specifications align with project requirements.
Select this component for applications requiring a PNP digital transistor with specific internal resistance ratios. Verify that the -40 V collector-emitter breakdown voltage meets the system's maximum operating voltage. Ensure the SOT-323 package dimensions fit the PCB layout constraints. Check thermal derating curves if operation exceeds standard ambient temperatures.
This part belongs to the DDTA series of PNP pre-biased transistors from Diodes Incorporated. The series includes complementary NPN types (DDTC) and various resistor configurations. The DDTA142JU specifically denotes a PNP device with R1=470 Ohms and R2=10k Ohms. The 'U' suffix indicates the SOT-323 package type.
The DDTA142JU-7-F is listed as obsolete. Direct substitutes include other PNP pre-biased transistors with similar electrical characteristics and SOT-323 packaging. Verify pinout compatibility and electrical ratings such as BVCEO and IC before substitution.