DDTA143TE-7-F

Overview

The DDTA143TE-7-F is a PNP pre-biased transistor manufactured by Diodes Incorporated, housed in an SOT523 surface-mount package. It features an epitaxial planar die construction with a built-in base resistor (R1) of 4.7 kOhms nominal value. The device supports a maximum collector-emitter voltage (VCEO) of -50 V and a continuous collector current of -100 mA. Power dissipation is rated at 150 mW, with a thermal resistance from junction to ambient air of 833 °C/W. The DC current gain (hFE) ranges from 100 to 600 under standard test conditions. Operating and storage temperatures span from -55°C to +150°C.

Feature Summary

• Integrates a single internal biasing resistor (R1 only) to simplify circuit design and reduce component count.
• Utilizes epitaxial planar die construction for reliable performance within a compact SOT523 case.
• Manufactured using halogen-free and antimony-free green molding compounds compliant with RoHS directives.

Applications

• General-purpose switching applications requiring simplified bias networks.
• Driver circuits for low-power loads where space constraints favor the SOT523 footprint.
• Logic interface stages converting microcontroller signals to drive higher current requirements.

Procurement Notes

Verify compliance with specific environmental directives such as RoHS 3 and REACH when sourcing. Confirm that the ordering suffix matches the required reel size and tape width specifications. Ensure the selected distributor provides traceability documentation consistent with Diodes Incorporated manufacturing standards. Check for any recent product change notices regarding assembly sites or material composition updates before finalizing procurement orders.

Selection Notes

Select this component when a PNP configuration with a 4.7 kOhm base resistor is required. Compare the 150 mW power dissipation limit against the expected thermal load in the target application. Consider the transition frequency of 250 MHz if high-speed switching characteristics are necessary. Verify that the -50 V breakdown voltage aligns with the maximum circuit voltages to prevent device failure during operation.

Part Context

This part belongs to the DDTA R1-only series of pre-biased transistors from Diodes Incorporated. It serves as the PNP counterpart to the DDTC NPN series, offering complementary functionality. The device is designed to replace discrete resistor-transistor combinations, saving board space and assembly time in consumer electronics and industrial control systems.

Replacement Considerations

Direct functional equivalents include other DDTA143 variants with different packaging, such as DDTA143XUA-7-F (SOT-323). Cross-reference with generic PNP digital transistors having similar 4.7 kOhm base resistance and -50 V ratings, ensuring pinout compatibility and thermal performance match the original design requirements.