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The DDTA143TE-7 is a PNP pre-biased transistor manufactured by Diodes Incorporated, housed in an SOT523 surface-mount package. It features an epitaxial planar die construction with a built-in base resistor (R1) of 4.7 kΩ nominal value. The device supports a collector-emitter voltage (VCEO) of -50 V and a continuous collector current of -100 mA. Power dissipation is rated at 150 mW, with a thermal resistance of 833 °C/W. DC current gain (hFE) ranges from 100 to 600 at IC = -1 mA, and the transition frequency reaches 250 MHz. Operating temperatures span from -55°C to +150°C.
Verify the specific ordering suffix against official documentation, as variations may exist between standard and automotive-grade versions. Confirm compliance requirements such as AEC-Q100 qualification if intended for automotive use. Ensure that the selected variant matches the required marking code and reel specifications for automated assembly processes.
Select this component when a PNP configuration with a 4.7 kΩ base resistor is required. Compare electrical characteristics such as saturation voltage and current gain against alternative pre-biased transistors. Consider the SOT523 footprint dimensions and thermal management capabilities relative to the application's power dissipation needs.
This part belongs to the DDTA R1-only series, which integrates a single base resistor. Other variants in this series include different resistance values such as 1kΩ, 2.2kΩ, 10kΩ, and 47kΩ. The series shares common mechanical and electrical characteristics, differing primarily in the nominal resistance value of the internal R1 component.
Direct substitutes within the same series include DDTA113TE-7-F (1kΩ), DDTA123TE-7-F (2.2kΩ), DDTA114TE-7-F (10kΩ), DDTA124TE-7-F (22kΩ), and DDTA144TE-7-F (47kΩ). Verify that any replacement maintains the required resistance value and package compatibility.