DDTA143TUA-7-F

Overview

The DDTA143TUA-7-F is a PNP pre-biased transistor in an SOT-323 package. It features a built-in biasing resistor (R1) with a nominal value of 4.7 kΩ and a tolerance of ±30%. The device has a collector-emitter voltage (VCEO) of -50 V, a collector current (IC) of -100 mA, and power dissipation of 200 mW. DC current gain (hFE) ranges from 100 to 600 at IC = -1 mA. The saturation voltage (VCE(sat)) is -0.3 V at IC/IB = -2.5mA/-0.25mA. Operating temperature range is -55°C to +150°C.

Feature Summary

• Integrates a single internal biasing resistor for simplified circuit design
• Utilizes epitaxial planar die construction for reliable performance
• Compliant with RoHS standards and free from halogen and antimony

Applications

• Switching applications requiring integrated base drive
• Driver circuits for logic interfaces
• General-purpose digital switching in compact designs

Procurement Notes

Verify the specific ordering suffix '-7-F' corresponds to the standard reel packaging configuration as documented in the manufacturer's ordering information table. Confirm that the component status remains 'Active' prior to procurement, as manufacturing statuses are subject to change without notice.

Selection Notes

Select this component when a PNP pre-biased transistor with a 4.7 kΩ input resistor is required. Ensure the application voltage does not exceed the -50 V collector-emitter rating and that the thermal resistance allows for adequate heat dissipation within the specified operating temperature range.

Part Context

This part belongs to the DDTA R1-only series manufactured by Diodes Incorporated. It is designed as a compact solution for replacing discrete resistor networks in digital switching applications, offering a smaller footprint compared to traditional multi-component configurations.

Replacement Considerations

Check for direct replacements within the same series, such as DDTA113TUA-7-F or DDTA123TUA-7-F, which share identical packaging and electrical characteristics but differ in the nominal value of the integrated biasing resistor.