DDTB113EC-7-F

Overview

The DDTB113EC-7-F is a PNP pre-biased transistor in an SOT23 package. It features built-in biasing resistors R1 and R2, both nominally 1kΩ. The device has a collector-emitter breakdown voltage (BVCEO) of -40V and a collector-base breakdown voltage (BVCBO) of -50V. Maximum continuous collector current is -500mA with a power dissipation of 200mW. DC current gain (hFE) ranges from 33 to 600 depending on test conditions. Operating temperature spans -55°C to +150°C.

Feature Summary

• Epitaxial planar die construction for reliable performance
• Integrated biasing resistors simplify circuit design
• Surface mount package suitable for automated assembly

Applications

• General purpose switching applications
• Driver circuits for low-power loads
• Logic level translation interfaces

Procurement Notes

Verify component status as the specific ordering suffix indicates obsolete status. Confirm availability through authorized distributors or secondary markets. Ensure compliance with RoHS and halogen-free requirements if specified for the application environment. Check packaging details against production needs.

Selection Notes

Select based on required input resistance values and polarity. Verify voltage ratings match system supply constraints. Consider thermal resistance and power dissipation limits for the intended operating environment. Compare alternative part numbers within the same series for different resistor configurations.

Part Context

This component belongs to the DDTB series of PNP pre-biased transistors manufactured by Diodes Incorporated. The series offers various resistor combinations in surface mount packages like SOT23. These devices are designed to replace discrete resistor-transistor networks, saving board space and simplifying assembly processes.

Replacement Considerations

Check for active equivalents such as DDTB114EC-7-F which shares the same package but differs in internal resistor values. Verify pinout compatibility and electrical characteristics before substitution.