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The DDTB113EU-7-F is a PNP pre-biased transistor manufactured by Diodes Incorporated, housed in an SOT-323 surface-mount package. It features built-in biasing resistors with nominal values of R1 = 1 kΩ and R2 = 1 kΩ. The device supports a maximum collector current of -500 mA and a supply voltage (VCC) of 50 V. Power dissipation is rated at 200 mW, with an operating temperature range from -55°C to +150°C. The component utilizes epitaxial planar die construction and is fully RoHS compliant.
Verify the obsolete status of this specific part number before initiating any procurement actions. Confirm that the required resistor ratios align with the final system design requirements. Ensure compliance with environmental directives such as RoHS 3 and halogen-free specifications during sourcing. Validate supplier authenticity through authorized channels to prevent counterfeit components.
Select this component when a compact PNP solution with integrated base resistance is required. The 1kΩ/1kΩ resistor configuration provides specific drive characteristics suitable for standard logic families. Consider thermal constraints due to the 200mW power dissipation limit in the small SOT-323 package. Evaluate alternative packages if higher current handling or different thermal profiles are necessary.
This component belongs to the DDTB series of pre-biased transistors from Diodes Incorporated. The series offers various resistor combinations within the SOT-323 footprint. It serves as a discrete alternative to complex driver stages, consolidating multiple passive and active elements into a single semiconductor package for space-constrained designs.
Public documentation confirms this part number is obsolete. Verify functional equivalents within the same manufacturer's portfolio that maintain identical pinouts and electrical characteristics. Ensure any substitute component meets the same thermal and voltage ratings.