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The DDTB113ZC-7-F is a PNP pre-biased transistor manufactured by Diodes Incorporated, housed in an SOT23 surface-mount package. It integrates built-in biasing resistors with nominal values of R1 = 1 kΩ and R2 = 10 kΩ. The device features an epitaxial planar die construction and supports a maximum collector-emitter voltage (BVCEO) of -40 V and a continuous collector current of -500 mA. Electrical characteristics include a minimum DC current gain (hFE) of 56 at IC = -5mA, VCE = -5V, and a typical gain-bandwidth product (fT) of 200 MHz. Power dissipation is rated at 200 mW, with an operating temperature range spanning from -55°C to +150°C.
Verify the specific ordering suffix '-7-F' against the manufacturer's official documentation to confirm packaging details and RoHS compliance status. Confirm that the active status aligns with current production schedules before finalizing procurement plans.
Select this component when a PNP configuration with asymmetric biasing resistors (1k/10k) is required. Ensure the application voltage does not exceed the -40 V collector-emitter breakdown rating and that thermal management accommodates the 200 mW power dissipation limit within the specified temperature range.
This part belongs to the DDTB series of PNP pre-biased transistors offered by Diodes Incorporated. The 'C' designation indicates the specific resistor ratio combination, while the 'Z' variant distinguishes it from other resistance pairings within the same physical package family.
Direct replacements must match the SOT23 package, PNP polarity, and the specific 1kΩ/10kΩ internal resistor network. Verify equivalent BVCEO and hFE ratings to ensure functional compatibility in existing designs.