DDTB113ZU-7-F

DDTB113ZU-7-F

  • Description:TRANS PREBIAS PNP 50V SOT323
  • Series:-

SKU:45609bc971d3 Category: Brand:

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Product Detailed Parameters

  • Description:TRANS PREBIAS PNP 50V SOT323
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR)
  • Resistors Included:R1 and R2
  • Transistor Type:PNP - Pre-Biased
  • Current - Collector (Ic) (Max):500 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):1 kOhms
  • Resistor - Emitter Base (R2):10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:56 @ 50mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 2.5mA, 50mA
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:200 MHz
  • Power - Max:200 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SC-70, SOT-323
  • Supplier Device Package:SOT-323

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DDTB113ZU-7-F

Overview

The DDTB113ZU-7-F is a PNP pre-biased transistor manufactured by Diodes Incorporated, housed in an SOT-323 surface-mount package. It integrates built-in biasing resistors with nominal values of R1 = 1 kΩ and R2 = 10 kΩ. The device features a supply voltage (VCC) rating of 50 V and a continuous collector current of -500 mA. Electrical characteristics include a minimum DC current gain (hFE) of 56 at IC = -5 mA and VCE = -5 V, and a gain-bandwidth product (fT) of 200 MHz. Power dissipation is rated at 200 mW with a thermal resistance (RθJA) of 625 °C/W. Operating and storage temperatures range from -55°C to +150°C.

Feature Summary

  • Epitaxial planar die construction for reliable performance
  • Integrated biasing resistors simplify circuit design
  • Totally lead-free and fully RoHS compliant
  • Halogen and antimony free "Green" device

Applications

  • Automotive applications requiring specific change control
  • General-purpose switching circuits
  • Driver circuits for low-power loads

Procurement Notes

Verify component authenticity through authorized distributors or the manufacturer directly. Confirm compliance with RoHS 2 and RoHS 3 directives. Check for AEC-Q100 qualification if automotive use is intended. Ensure proper handling procedures are followed due to surface mount packaging. Review datasheet specifications before integration into final designs.

Selection Notes

Select this component when a PNP digital transistor with 1kΩ base resistor and 10kΩ emitter resistor is required. Consider the 50V supply voltage limit and 500mA current capacity. Evaluate thermal constraints given the 200mW power dissipation rating. Compare against other DDTB series variants for different resistor ratios or NPN configurations.

Part Context

This part belongs to the DDTB series of PNP pre-biased transistors from Diodes Incorporated. It shares the SOT-323 package form factor with other members like DDTB114ZU and DDTB123ZU. The series offers various resistor combinations to suit different drive requirements while maintaining consistent electrical characteristics and packaging standards.

Replacement Considerations

Direct substitutes within the same family include DDTB113EU-7-F (1kΩ/1kΩ), DDTB123YU-7-F (2.2kΩ/10kΩ), and DDTB133HU-7-F (3.3kΩ/10kΩ). Verify pinout compatibility and electrical ratings match application needs before substitution.

FAQ

What are the nominal values of the built-in biasing resistors?

The DDTB113ZU-7-F has a base resistor (R1) of 1 kΩ and an emitter resistor (R2) of 10 kΩ.

What is the maximum supply voltage rating?

The maximum supply voltage (VCC) between pins 3 and 2 is rated at 50 V.

Is this component suitable for high-frequency applications?

Yes, it has a gain-bandwidth product (fT) of 200 MHz, making it suitable for moderate frequency switching applications.

DDTB113ZU-7-FDDTB113ZU-7-F

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