DDTB114EC-7-F

Overview

The DDTB114EC-7-F is a PNP pre-biased transistor manufactured by Diodes Incorporated, housed in an SOT-23 surface-mount package. It integrates built-in biasing resistors with nominal values of R1=10kΩ and R2=10kΩ. The device features a collector-emitter breakdown voltage (BVCEO) of -40V and a continuous collector current rating of -500mA. Electrical characteristics include a minimum DC current gain (hFE) of 56 at -50mA and a gain-bandwidth product (fT) of 200MHz. Thermal performance specifies a power dissipation of 200mW and a junction-to-ambient thermal resistance of 625°C/W. Operating temperatures range from -55°C to +150°C.

Feature Summary

• Epitaxial planar die construction for reliable semiconductor performance
• Integrated biasing resistors simplify circuit design and reduce component count
• Surface mount SOT-23 package optimized for automated assembly processes
• Lead-free and fully RoHS compliant with halogen and antimony-free green materials

Applications

• General-purpose switching applications requiring simplified drive circuits
• Driver stages for relays, solenoids, or small motors
• Logic level translation between microcontrollers and peripheral loads
• Power management circuits within consumer electronics

Procurement Notes

Verify the specific ordering suffix '-7-F' against the manufacturer's official documentation to confirm packaging details and active status. Confirm compliance requirements such as RoHS 3 and REACH if applicable to your region. Ensure the selected distributor sources directly from authorized channels to guarantee authenticity and traceability of the electronic components.

Selection Notes

Select this component when a single PNP transistor with integrated base and emitter resistors is required. Verify that the 10kΩ resistor values align with the target logic drive currents. Ensure the -40V voltage rating exceeds the maximum supply voltage in the application. Consider the 200mW power dissipation limit and thermal resistance when designing the PCB layout for adequate heat sinking.

Part Context

This part belongs to the DDTB series of PNP pre-biased transistors from Diodes Incorporated. The 'EC' designation indicates the specific internal resistor configuration (R1=10kΩ, R2=10kΩ). The series offers various resistor combinations to suit different drive requirements while maintaining the same SOT-23 form factor and electrical ratings for interchangeability in design.

Replacement Considerations

Direct substitutes within the same family include DDTB113EC-7-F (1kΩ/1kΩ), DDTB123EC-7-F (2.2kΩ/2.2kΩ), and DDTB143EC-7-F (4.7kΩ/4.7kΩ). These parts share identical pinouts and electrical ratings but differ in internal resistor values. Verify that the alternative resistor ratios meet the specific drive current requirements of the target circuit.