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The DDTB114GC-7-F is a PNP pre-biased transistor manufactured by Diodes Incorporated, housed in an SOT23 surface-mount package. It features built-in biasing resistors with R1 at 0 Ohms and R2 at 10 kOhms. The device has a collector-emitter breakdown voltage (BVCEO) of -40 V and a collector-base breakdown voltage (BVCBO) of -50 V. Maximum continuous collector current is -500 mA, with power dissipation rated at 200 mW. DC current gain (hFE) ranges from 56 to 600. Operating temperature spans from -55°C to +150°C.
Verify component authenticity through authorized channels. Confirm RoHS compliance status as required by regional regulations. Check datasheet revisions for potential parameter updates before finalizing designs. Ensure storage conditions meet moisture sensitivity level requirements.
Select this part when a single PNP transistor with a 10k pull-down resistor is needed. Verify that the 0-ohm input resistor configuration matches the specific logic drive requirements. Compare thermal resistance values against available PCB copper area for adequate heat dissipation.
This component belongs to the DDTB series of PNP digital transistors. It shares the same SOT23 footprint and general electrical characteristics as other members like the DDTB114EC, but differs in internal resistor network topology. The 'C' suffix indicates the specific package type and manufacturing revision.
DDTB114EC-7-F
In the DDTB114GC configuration, the R1 resistor value is 0 Ohms, effectively acting as a direct connection between the base and the input terminal.
Standard versions are not explicitly qualified for automotive use. For AEC-Q100 qualified parts, contact Diodes Incorporated directly or consult their specific automotive product listings.
The maximum operating junction temperature (TJ) is +150°C.