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The DDTB114GU-7-F is a PNP pre-biased transistor in an SOT323 package. It features built-in biasing resistors with R1 at 0 kΩ and R2 at 10 kΩ. The device has a collector-emitter voltage of -40 V, continuous collector current of -500 mA, and power dissipation of 200 mW. DC current gain (hFE) ranges from 56 to 600. Operating temperature spans -55°C to +150°C.
Verify the obsolete status of this component before procurement planning. Confirm availability through authorized distributors or secondary markets if standard supply channels are exhausted. Ensure compliance with RoHS and halogen-free requirements as specified in the datasheet notes. Check for potential end-of-life notifications or product discontinuance alerts from Diodes Incorporated.
Select this part when a single PNP transistor with a 10k pull-down resistor is required. Verify that the 0k input resistor configuration matches the circuit design needs. Ensure the SOT323 package dimensions fit the PCB layout constraints. Consider the -40V rating and 500mA current capability against the application load requirements.
This component belongs to the DDTB series of PNP pre-biased transistors manufactured by Diodes Incorporated. The 'U' suffix indicates the SOT323 surface-mount package. The '114' designation specifies the resistor values, while 'G' denotes the specific 0k/10k configuration within this family.
Check for equivalent parts with similar resistor ratios and voltage ratings. Verify pinout compatibility for direct replacement. Consider alternative packages if space allows. Consult Diodes Incorporated for recommended cross-references or updated components.