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The DDTB114TC-7-F is a PNP pre-biased transistor manufactured by Diodes Incorporated, housed in an SOT-23 surface-mount package. It integrates a single NPN transistor with built-in biasing resistors R1 and R2, where R1 is nominally 10 kΩ and R2 is open. Key electrical specifications include a collector-emitter breakdown voltage (BVCEO) of -40 V, a maximum continuous collector current of -500 mA, and a power dissipation rating of 200 mW at +25°C. The device operates within a temperature range of -55°C to +150°C and features a DC current transfer ratio (hFE) minimum of 100.
Verify the obsolete status of this specific part number before procurement planning. Confirm availability through authorized distributors or secondary markets if active supply is unavailable. Ensure compliance with environmental directives such as RoHS 3 and REACH requirements during sourcing. Validate that the supplier provides original manufacturer documentation to guarantee authenticity and traceability.
Select this component when a PNP digital transistor with a 10 kΩ base resistor and no emitter resistor is required. Consider the -40 V collector-emitter breakdown voltage limit for circuit design. Evaluate the 200 mW power dissipation capability against thermal constraints in the target application environment.
This component belongs to the DDTB series of PNP pre-biased transistors from Diodes Incorporated. The 'TC' suffix indicates the specific resistor configuration with a 10 kΩ base resistor and an open emitter resistor. It shares the same epitaxial planar construction and SOT-23 packaging as other members of the DDTB family.
Publicly confirmed substitute part numbers are not available in the provided source material. Verify compatibility with alternative components based on matching electrical parameters, pinout configuration, and package dimensions.