DDTB114TU-7-F

Overview

The DDTB114TU-7-F is a PNP pre-biased transistor manufactured by Diodes Incorporated, housed in an SOT323 surface-mount package. It features an epitaxial planar die construction with built-in biasing resistors configured as R1-only (R2 open). The nominal base resistor value is 10 kΩ. Key electrical ratings include a collector-emitter breakdown voltage of -40 V and a continuous collector current of -500 mA. Power dissipation is rated at 200 mW, with an operating temperature range spanning from -55°C to +150°C.

Feature Summary

• Epitaxial planar die construction for reliable performance
• Integrated biasing resistors simplify circuit design
• Surface mount package optimized for automated assembly
• Totally lead-free and fully RoHS compliant

Applications

• General-purpose switching applications
• Driver circuits for low-power loads
• Logic level translation interfaces

Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to confirm packaging details and compliance status. Confirm component availability through authorized distribution channels prior to procurement planning. Ensure all regulatory requirements are met for the intended deployment environment.

Selection Notes

Select this component when a PNP configuration with a single 10 kΩ base resistor is required. Verify that the -40 V collector-emitter breakdown voltage meets the circuit's maximum voltage requirements. Ensure the -500 mA output current capability aligns with the load specifications.

Part Context

This component belongs to the DDTB series of pre-biased transistors offered by Diodes Incorporated. The series provides various resistor combinations within compact surface-mount packages to facilitate digital logic interfacing and switching tasks.

Replacement Considerations

Consult the official datasheet for alternative part numbers within the same series or family that offer compatible pinouts and electrical characteristics.