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The DDTB122JC-7-F is a PNP pre-biased transistor manufactured by Diodes Incorporated, housed in an SOT-23 surface-mount package. It integrates built-in biasing resistors with nominal values of R1 = 0.22 kΩ and R2 = 4.7 kΩ. The device features a collector-emitter breakdown voltage (BVCEO) of -40 V and a continuous collector current rating of -500 mA. Electrical characteristics include a minimum DC current gain (hFE) of 100 at IC = -5 mA and a typical gain-bandwidth product (fT) of 200 MHz. Power dissipation is rated at 200 mW, with an operating temperature range spanning from -55°C to +150°C.
Verify component status before procurement as the DDTB122JC-7-F is listed as obsolete in official documentation. Confirm availability through authorized distributors or secondary markets if immediate sourcing is required. Ensure compliance with RoHS and halogen-free specifications during acquisition.
Select this component when a PNP configuration with specific internal resistance ratios is required. The 0.22 kΩ input resistor suits high-speed switching needs compared to higher resistance variants. Verify that the -40 V breakdown voltage meets system requirements.
This part belongs to the DDTB series of PNP pre-biased transistors from Diodes Incorporated. It shares the SOT-23 form factor with other members like DDTB123EC and DDTB143EC but differs in internal resistor configurations. The 'C' suffix indicates the specific package type and manufacturing revision.
Direct substitutes are not explicitly confirmed in public datasheets due to the obsolete status. Consider equivalent PNP pre-biased transistors from other manufacturers with matching SOT-23 packages and similar electrical ratings.