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The DDTB123EC-7-F is a PNP pre-biased transistor manufactured by Diodes Incorporated, housed in an SOT-23 surface-mount package. It integrates two biasing resistors with nominal values of 2.2 kΩ each (R1 and R2). The device features an epitaxial planar die construction and supports a maximum collector current of -500 mA and a supply voltage of -50 V. Key electrical parameters include a minimum DC current gain (hFE) of 39 at -50 mA, a typical gain-bandwidth product of 200 MHz, and a power dissipation rating of 200 mW. It operates within a temperature range of -55°C to +150°C.
Verify the specific ordering suffix and status before procurement. Official documentation lists this part number as obsolete; confirm availability through authorized distributors or consider active alternatives from the same series. Ensure compliance with RoHS and halogen-free requirements if specified for the target application environment.
Select this component when a PNP digital transistor with a 2.2kΩ/2.2kΩ resistor ratio is required in an SOT-23 package. Compare against other DDTB variants for different resistance values or polarity. Verify that the -500 mA output current and -50 V voltage ratings meet the load requirements. Check thermal resistance limits for high-duty cycle operations.
This component belongs to the DDTB series of PNP pre-biased transistors from Diodes Incorporated. The series offers various resistor configurations and ratios to accommodate different logic drive levels. The 'EC' suffix typically denotes the specific 2.2kΩ/2.2kΩ resistor configuration within this family.
Official documentation marks DDTB123EC-7-F as obsolete. Consider active substitutes such as DDTB114EC-7-F or DDTB123YC-7-F from the same manufacturer, ensuring resistor values and pinouts are compatible.