ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：TRANS PREBIAS PNP 50V SOT23-3
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 and R2
- Transistor Type：PNP - Pre-Biased
- Current - Collector (Ic) (Max)：500 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：2.2 kOhms
- Resistor - Emitter Base (R2)：10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：56 @ 50mA, 5V
- Vce Saturation (Max) @ Ib, Ic：300mV @ 2.5mA, 50mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：200 MHz
- Power - Max：200 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3
Download product information
Overview
The DDTB123YC-7-F is a PNP pre-biased transistor manufactured by Diodes Incorporated, housed in an SOT-23 surface-mount package. It integrates built-in biasing resistors with nominal values of R1 = 2.2 kΩ and R2 = 10 kΩ. The device features a collector-emitter breakdown voltage (BVCEO) of -40 V and a continuous collector current rating of -500 mA. Power dissipation is rated at 200 mW, with a minimum DC current gain (hFE) of 56. Operating temperatures range from -55°C to +150°C.
Feature Summary
- Epitaxial planar die construction for reliable performance
- Integrated biasing resistors simplify circuit design
- Totally lead-free and fully RoHS compliant
- Halogen and antimony free "Green" device
Applications
- Automotive applications requiring specific change control
- General-purpose switching circuits
- Driver circuits for low-power loads
Procurement Notes
Verify the active status of the part number through official Diodes Incorporated channels before procurement. Confirm that the ordering suffix matches the required packaging specifications. Ensure compliance with relevant automotive or industrial standards if applicable to the end-use environment.
Selection Notes
Select this component when a PNP digital transistor with a 2.2 kΩ base resistor and 10 kΩ emitter resistor is required. Verify that the -40 V collector-emitter voltage rating meets the circuit's maximum supply requirements. Consider the 200 mW power dissipation limit under expected thermal conditions.
Part Context
This component belongs to the DDTB series of PNP pre-biased transistors. It shares the same SOT-23 package and general electrical characteristics as other members of the family, distinguished primarily by the specific internal resistor network configuration defined by the model code.
Replacement Considerations
DDTB123EC-7-F
FAQ
What are the nominal values of the built-in resistors?
The DDTB123YC-7-F has a nominal base resistor (R1) of 2.2 kΩ and a nominal emitter resistor (R2) of 10 kΩ.
Is this component suitable for high-temperature environments?
Yes, the operating and storage temperature range extends up to +150°C.
What is the maximum continuous collector current?
The maximum continuous collector current is rated at -500 mA.
