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The DDTB123YU-7-F is a PNP pre-biased transistor in an SOT323 package. It features built-in biasing resistors with nominal values of R1 = 2.2 kΩ and R2 = 10 kΩ. The device has a collector-emitter breakdown voltage (BVCEO) of -40 V and a supply voltage rating of 50 V. Maximum continuous collector current is -500 mA, with power dissipation at 200 mW. DC current gain ranges from 39 to 56, and the gain-bandwidth product is 200 MHz. Operating temperature spans -55°C to +150°C.
Verify component authenticity through authorized Diodes Incorporated channels or certified distributors. Confirm datasheet revision DS30383 Rev. 7-2 matches the supplied parts. Check marking codes for date code accuracy. Ensure storage conditions comply with moisture sensitivity level 1 requirements before soldering.
Select this part when a PNP configuration with specific 2.2k/10k resistor ratios is required. Compare against DDTB123EU if equal resistor values are needed instead. Verify thermal resistance of 625 °C/W fits the application's heat dissipation constraints. Ensure input voltage limits align with the system's signal levels.
This component belongs to the DDTB series of PNP pre-biased transistors manufactured by Diodes Incorporated. It shares the SOT323 form factor with other variants like DDTB123EU and DDTB143EU. The series offers various resistor combinations to accommodate different drive requirements while maintaining a compact footprint for space-constrained designs.
DDTB123EU-7-F provides identical electrical characteristics but uses equal 2.2kΩ resistors for R1 and R2. DDTB143EU-7-F offers higher resistance values of 4.7kΩ. Verify pinout compatibility and ensure the alternative part meets the same thermal and voltage ratings.