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The DDTB143EC-7-F is a PNP pre-biased transistor manufactured by Diodes Incorporated, housed in an SOT-23 surface-mount package. It integrates built-in biasing resistors with nominal values of R1 = 4.7 kΩ and R2 = 4.7 kΩ. The device features a collector-emitter breakdown voltage (BVCEO) of -40 V and a continuous collector current rating of -500 mA. Electrical characteristics include a minimum DC current gain (hFE) of 56 at -5V/ -50mA and a typical gain-bandwidth product of 200 MHz. Thermal performance specifies a power dissipation of 200 mW and a junction-to-ambient thermal resistance of 625 °C/W.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm availability status. The datasheet indicates this part number may be obsolete; confirm active production status directly with Diodes Incorporated or authorized distributors before finalizing procurement plans.
Select this component when a PNP configuration with equal 4.7 kΩ biasing resistors is required. Ensure the application voltage does not exceed the -40 V collector-emitter breakdown limit. Verify that the SOT-23 package dimensions align with the target PCB footprint and that the 200 mW power dissipation rating accommodates the thermal environment.
This component belongs to the DDTB series of PNP pre-biased transistors from Diodes Incorporated. It shares the same physical package and general electrical architecture as other variants in the family, distinguished primarily by the internal resistor network values. The 'EC' suffix specifically denotes the 4.7kΩ/4.7kΩ resistor combination within the SOT-23 form factor.
Direct substitutes within the same series include DDTB113EC-7-F (1kΩ/1kΩ), DDTB123EC-7-F (2.2kΩ/2.2kΩ), and DDTB114EC-7-F (10kΩ/10kΩ). These parts share identical pinouts and maximum ratings but differ in internal biasing resistance values.