DDTB143EC-7-F

DDTB143EC-7-F

  • Description:TRANS PREBIAS PNP 50V SOT23-3
  • Series:-

SKU:03308f813383 Category: Brand:

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Product Detailed Parameters

  • Description:TRANS PREBIAS PNP 50V SOT23-3
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR)
  • Resistors Included:R1 and R2
  • Transistor Type:PNP - Pre-Biased
  • Current - Collector (Ic) (Max):500 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):4.7 kOhms
  • Resistor - Emitter Base (R2):4.7 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:47 @ 50mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 2.5mA, 50mA
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:200 MHz
  • Power - Max:200 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SOT-23-3

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DDTB143EC-7-F

Overview

The DDTB143EC-7-F is a PNP pre-biased transistor manufactured by Diodes Incorporated, housed in an SOT-23 surface-mount package. It integrates built-in biasing resistors with nominal values of R1 = 4.7 kΩ and R2 = 4.7 kΩ. The device features a collector-emitter breakdown voltage (BVCEO) of -40 V and a continuous collector current rating of -500 mA. Electrical characteristics include a minimum DC current gain (hFE) of 56 at -5V/ -50mA and a typical gain-bandwidth product of 200 MHz. Thermal performance specifies a power dissipation of 200 mW and a junction-to-ambient thermal resistance of 625 °C/W.

Feature Summary

  • Integrates dual biasing resistors to simplify circuit design and reduce component count
  • Utilizes epitaxial planar die construction for reliable switching performance
  • Compliant with RoHS standards and halogen-free manufacturing requirements

Applications

  • General-purpose switching applications requiring simplified bias networks
  • Automotive electronics systems compatible with IATF 16949 certified facilities
  • Low-power digital logic interfacing and level shifting circuits

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm availability status. The datasheet indicates this part number may be obsolete; confirm active production status directly with Diodes Incorporated or authorized distributors before finalizing procurement plans.

Selection Notes

Select this component when a PNP configuration with equal 4.7 kΩ biasing resistors is required. Ensure the application voltage does not exceed the -40 V collector-emitter breakdown limit. Verify that the SOT-23 package dimensions align with the target PCB footprint and that the 200 mW power dissipation rating accommodates the thermal environment.

Part Context

This component belongs to the DDTB series of PNP pre-biased transistors from Diodes Incorporated. It shares the same physical package and general electrical architecture as other variants in the family, distinguished primarily by the internal resistor network values. The 'EC' suffix specifically denotes the 4.7kΩ/4.7kΩ resistor combination within the SOT-23 form factor.

Replacement Considerations

Direct substitutes within the same series include DDTB113EC-7-F (1kΩ/1kΩ), DDTB123EC-7-F (2.2kΩ/2.2kΩ), and DDTB114EC-7-F (10kΩ/10kΩ). These parts share identical pinouts and maximum ratings but differ in internal biasing resistance values.

DDTB143EC-7-FDDTB143EC-7-F

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