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The DDTB143TC-7-F is a PNP pre-biased transistor manufactured by Diodes Incorporated, housed in an SOT23 surface-mount package. It features an epitaxial planar die construction with built-in biasing resistors configured as R1 = 4.7 kΩ and R2 open. The device supports a maximum collector current of -500 mA and a supply voltage of -50 V. Electrical characteristics include a minimum DC current gain (hFE) of 100 at -5 mA, a saturation voltage of -0.3 V at -50 mA, and a gain-bandwidth product of 200 MHz. Thermal resistance from junction to ambient is 625 °C/W, with power dissipation rated at 200 mW.
Verify component authenticity through authorized channels. Confirm RoHS compliance and lead-free status against the latest datasheet revision. Check manufacturing date codes and packaging specifications to ensure compatibility with existing assembly processes. Validate that the obsolete status does not impact long-term supply requirements.
Select this component when a PNP configuration with a single 4.7 kΩ base resistor is required. Ensure the application operates within the -500 mA collector current limit and -50 V supply voltage constraints. Verify thermal management capabilities given the 200 mW power dissipation rating in the SOT23 package.
This part belongs to the DDTB series of PNP pre-biased transistors from Diodes Incorporated. The 'TC' suffix indicates a specific resistor configuration with one active biasing resistor. These devices are designed to replace discrete resistor-transistor networks, reducing board space and assembly costs.
The datasheet lists DDTB143TC-7-F as Obsolete. Potential substitutes within the same family include DDTB113EC-7-F or DDTB114EC-7-F, but these have different resistor values. Verify electrical compatibility before substitution.