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The DDTC113TCA-7 is an NPN pre-biased transistor from the R1-only series, housed in a SOT23 package. It features a built-in base resistor (R1) with a nominal value of 1 kΩ and a tolerance of ±30%. The device supports a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current (IC) of 100 mA. Electrical characteristics include a minimum DC current gain (hFE) of 100 at IC = 1 mA and VCE = 5 V, and a saturation voltage (VCE(sat)) of 0.3 V max at IC/IB = 10 mA/1 mA. Power dissipation is rated at 200 mW, with an operating temperature range from -55°C to +150°C.
Verify the specific ordering suffix against official Diodes Incorporated documentation before procurement. The provided datasheet lists the DDTC113TCA-7-F as active; confirm if the non-suffixed or differently suffixed variant maintains identical electrical specifications and packaging requirements. Ensure compliance with project-specific environmental standards such as RoHS 3 and REACH.
Select this component when a compact NPN solution with integrated base resistance is required. The 1 kΩ internal resistor reduces external component count compared to discrete transistor configurations. Verify that the 100 mA current rating and 50 V voltage limits align with the target application's load requirements and supply voltages.
This part belongs to the DDTC113 series of pre-biased transistors manufactured by Diodes Incorporated. The series offers various resistor values and complementary PNP types (DDTA). The CA suffix indicates the SOT23 package type. This family is designed for surface-mount assembly, providing a space-efficient alternative to standard bipolar junction transistors in digital logic and switching environments.
Direct substitutes within the same manufacturer series include DDTC113TCA-7-F. Cross-manufacturer equivalents should match the NPN polarity, 50 V VCEO, 100 mA IC, 1 kΩ base resistor, and SOT23 package constraints.