SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The DDTC113TE-7-F is an NPN pre-biased transistor from Diodes Incorporated, housed in a surface-mount SOT523 package. It features an epitaxial planar die construction with a built-in single biasing resistor (R1) of 1 kΩ nominal value. The device supports a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. Electrical characteristics include a DC current transfer ratio (hFE) ranging from 100 to 600 at IC = 1mA, and a gain-bandwidth product (fT) of 250 MHz. Power dissipation is rated at 150 mW, with an operating temperature range spanning -55°C to +150°C.
Verify the component authenticity by checking the marking code against official documentation. Confirm compliance requirements such as RoHS 3 and REACH status before integration. Ensure the ordering suffix matches the required packaging quantity and reel specifications. Cross-reference the date code key to validate production timelines and lot traceability during the procurement process.
Select this component when a compact NPN solution with integrated base resistance is required. The 1 kΩ input resistor value determines the base drive current relative to the input voltage. Consider the SOT523 footprint constraints and thermal resistance characteristics for heat dissipation planning. Verify that the 50 V voltage rating meets the system's maximum operational limits under all conditions.
This part belongs to the DDTC(R1-ONLY SERIES) E family of pre-biased transistors manufactured by Diodes Incorporated. It is designed as a complementary counterpart to the PNP DDTA series. The series utilizes a standardized SOT523 case material with molded plastic and matte tin terminals. It is produced in IATF 16949 certified facilities to support automotive quality standards.
Direct substitutes within the same series include DDTC123TE-7-F (2.2kΩ), DDTC143TE-7-F (4.7kΩ), and DDTC114TE-7-F (10kΩ). These parts share identical electrical ratings and package dimensions but differ in the nominal value of the internal biasing resistor.