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The DDTC113TE-7 is an NPN pre-biased transistor from the DDTC (R1-ONLY SERIES) E, manufactured by Diodes Incorporated. It features a single built-in biasing resistor with a nominal value of 1 kΩ. The device utilizes epitaxial planar die construction and is housed in a SOT523 surface-mount package. Key electrical ratings include a collector-emitter voltage of 50 V, continuous collector current of 100 mA, and power dissipation of 150 mW. The DC current transfer ratio (hFE) ranges from 100 to 600 at IC = 1mA and VCE = 5V. The component operates within a temperature range of -55°C to +150°C.
Verify the exact ordering suffix against official documentation, as variations such as -7-F indicate specific packaging configurations like tape and reel quantities. Confirm compliance requirements including RoHS 3 and AEC-Q101 qualification status if intended for automotive use. Ensure sourcing channels are authorized to maintain product integrity and warranty coverage.
Select this component when a compact NPN pre-biased transistor with a 1 kΩ base resistor is required. The SOT523 package suits space-constrained designs. Consider the hFE range and saturation voltage characteristics for drive capability. Verify thermal resistance and power dissipation limits relative to the ambient operating conditions of the target application.
This part belongs to the DDTC (R1-ONLY SERIES) E family, which includes various resistor values for different biasing needs. Complementary PNP types are available in the DDTA series. The 'E' suffix typically denotes environmental compliance and specific manufacturing standards defined by Diodes Incorporated.
Direct substitutes may include other NPN pre-biased transistors in SOT523 packages with similar R1 values and electrical ratings. Verify pinout compatibility and absolute maximum ratings before substitution. Cross-reference with manufacturer datasheets for equivalent parts.