DDTC113TKA-7-F

DDTC113TKA-7-F

  • Description:TRANS PREBIAS NPN 50V SC59-3
  • Series:-

SKU:6e4fc8e1e519 Category: Brand:

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Product Detailed Parameters

  • Description:TRANS PREBIAS NPN 50V SC59-3
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR)
  • Resistors Included:R1 Only
  • Transistor Type:NPN - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):1 kOhms
  • Resistor - Emitter Base (R2):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max):500nA (ICBO)
  • Frequency - Transition:250 MHz
  • Power - Max:200 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SC-59-3

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DDTC113TKA-7-F

Overview

The DDTC113TKA-7-F is an NPN pre-biased small signal surface mount transistor manufactured by Diodes Incorporated. It features epitaxial planar die construction and a built-in biasing resistor (R1) with a nominal value of 1 kΩ. The device is housed in an SC-59 package, measuring 2.70 mm to 3.00 mm in length and 1.50 mm to 1.70 mm in width. Key electrical ratings include a collector-emitter voltage (VCEO) of 50 V, a continuous collector current (IC) of 100 mA, and power dissipation (Pd) of 200 mW at 25°C. The DC current transfer ratio (hFE) ranges from 100 to 600, with a gain-bandwidth product of 250 MHz.

Feature Summary

  • Integrates a single built-in biasing resistor (R1 only) for simplified circuit design
  • Utilizes epitaxial planar die construction for reliable performance
  • Compliant with RoHS standards and lead-free plating specifications

Applications

  • General-purpose switching applications
  • Driver circuits for low-power loads
  • Logic interface buffering

Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to confirm packaging details and compliance status. Ensure that the SC-59 package dimensions align with the target PCB footprint requirements. Confirm that the thermal resistance characteristics are suitable for the intended operating environment and mounting conditions on FR4 substrates.

Selection Notes

Select this component when a compact NPN solution with integrated base biasing is required. The 1 kΩ internal resistor simplifies drive circuitry compared to discrete transistors. Consider the SC-59 package size constraints and the 200 mW power dissipation limit. Verify that the 50 V voltage rating meets the maximum collector-emitter voltage requirements of the application.

Part Context

This part belongs to the DDTC (R1-ONLY SERIES) KA family from Diodes Incorporated. It is specifically designed as an NPN pre-biased transistor. Complementary PNP types are available within the DDTA series. The 'KA' designation indicates the SC-59 case style and specific marking codes associated with this physical package configuration.

Replacement Considerations

Direct replacements must match the NPN polarity, SC-59 package, and 1 kΩ internal resistor value. Verify that alternative components meet or exceed the 50 V VCEO and 100 mA IC ratings. Check for compatible hFE ranges and thermal resistance values to ensure equivalent performance in the existing circuit layout.

DDTC113TKA-7-FDDTC113TKA-7-F

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