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The DDTC113ZE-7-F is an NPN pre-biased transistor manufactured by Diodes Incorporated, housed in a SOT523 package. It features built-in biasing resistors with nominal values of R1 = 1 kΩ and R2 = 10 kΩ. The device supports a maximum supply voltage (VCC) of 50 V and a continuous collector current (IC) of 100 mA. Power dissipation is rated at 150 mW, with a thermal resistance (RθJA) of 833 °C/W. The transition frequency (fT) is typically 250 MHz. Operating and storage temperatures range from -55°C to +150°C.
Verify the complete part number including the suffix '-7-F' to ensure correct packaging configuration. Confirm that the required resistor ratio matches the specific application needs, as other variants in the series offer different R1 and R2 values. Check for automotive qualification requirements if the component is intended for IATF 16949 certified facilities.
Select this NPN variant when a complementary PNP type is not required; DDTA113ZE is the available complementary option. Ensure the input voltage limits are respected, as they vary across the series based on resistor values. Verify that the 100 mA output current capability meets the load requirements without exceeding the 150 mW power dissipation limit under worst-case thermal conditions.
This component belongs to the DDTC (R1≠R2 Series) E family of NPN pre-biased transistors. It shares the same SOT523 mechanical footprint and epitaxial construction as other members like DDTC123YE and DDTC143ZE. The primary distinction lies in the internal resistor network values, which dictate the specific input characteristics and drive capabilities for different logic families.
DDTA113ZE-7-F serves as the complementary PNP equivalent within the same manufacturer's lineup. Other manufacturers may offer functionally similar NPN pre-biased transistors in SOT523 packages, but verification of pinout compatibility and electrical parameters is necessary.