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The DDTC113ZE-7 is an NPN pre-biased transistor from Diodes Incorporated, housed in a SOT523 surface-mount package. It integrates built-in biasing resistors with nominal values of R1 = 1 kΩ and R2 = 10 kΩ. The device supports a maximum supply voltage (VCC) of 50 V and a continuous collector current (IC) of 100 mA. Electrical characteristics include a DC current gain (hFE) minimum of 33 at 5V/5mA and a transition frequency (fT) of 250 MHz. Power dissipation is rated at 150 mW, with an operating temperature range spanning -55°C to +150°C.
Verify the complete part number against official documentation, as ordering suffixes define packaging specifics such as reel size and tape width. Confirm that the selected component meets all applicable environmental directives and quality standards required for the intended deployment environment before finalizing procurement.
Select this component when an NPN configuration with specific 1kΩ base and 10kΩ emitter resistor ratios is required. Ensure the application voltage does not exceed the 50V limit and that thermal management accommodates the 150mW dissipation rating within the specified ambient temperature constraints.
This component belongs to the DDTC (R1≠R2 Series) E family of NPN pre-biased transistors. It serves as the functional complement to the DDTA series PNP types. The device utilizes the SOT523 footprint, offering a compact solution for space-constrained printed circuit board layouts compared to larger discrete transistor packages.
Direct substitutes within the same manufacturer's portfolio include other variants from the DDTC1xxxE series with matching electrical ratings. Cross-manufacturer replacements must be verified for pin compatibility, voltage limits, and internal resistance values.