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The DDTC114EE-7-F is an NPN pre-biased transistor from Diodes Incorporated, housed in a SOT523 surface-mount package. It features built-in biasing resistors with nominal values of R1 = 10kΩ and R2 = 10kΩ. The device supports a maximum supply voltage (VCC) of 50V and a continuous collector current (IC) of 100mA. Power dissipation is rated at 150mW, with a thermal resistance (RθJA) of 833°C/W. Operating and storage temperatures range from -55°C to +150°C. Transition frequency (fT) is typically 250MHz.
Verify the specific ordering suffix against official documentation to confirm packaging details. Confirm that the component meets all required environmental standards and compliance certifications before finalizing procurement decisions. Ensure compatibility with existing manufacturing processes and equipment specifications.
Select this component when a compact NPN digital transistor with equal internal biasing resistors is required. Verify that the 10kΩ resistor values align with the target input logic levels and switching speeds. Consider the SOT523 footprint constraints and ensure adequate thermal management for the intended power dissipation levels within the operating temperature range.
This part belongs to the DDTC (R1 = R2 Series) EE family of NPN pre-biased transistors manufactured by Diodes Incorporated. The series includes various resistor value combinations tailored for different interface requirements. All members share the same SOT523 package and fundamental electrical characteristics, differing primarily in their internal resistor ratios.
Complementary PNP types are available within the DDTA series. Verify pinout compatibility and electrical parameters when considering alternative manufacturers or equivalent parts from other suppliers.