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The DDTC114ELP-7 is a single NPN pre-biased small signal transistor manufactured by Diodes Incorporated. It features an epitaxial planar die construction housed in an X1-DFN1006-3 leadless surface mount package. The device integrates internal base resistors R1 and R2, both nominally rated at 10 kΩ with a resistance ratio of 1. Key electrical specifications include a collector-emitter breakdown voltage (BVCEO) of 50 V, a maximum continuous collector current of 100 mA, and a power dissipation rating of 250 mW. The component exhibits a current gain-bandwidth product (fT) of 250 MHz and operates within a temperature range of -55°C to +150°C.
Verify the specific ordering suffix against official manufacturer documentation before procurement. Confirm that the requested part number matches the exact package type and marking code required for the assembly process. Ensure compliance with RoHS and halogen-free material requirements as specified in the datasheet notes.
Select this component when a compact NPN digital transistor with equal base resistors is required. The X1-DFN1006-3 package is suitable for automated assembly processes where minimal footprint is critical. Verify that the 50V voltage rating and 100mA current capacity align with the target application's load requirements.
This component belongs to the DDTC114 series of pre-biased transistors from Diodes Incorporated. The series offers various configurations with different resistor values and packages. The ELP suffix specifically denotes the X1-DFN1006-3 leadless package variant designed for space-constrained surface mount applications.
Direct substitutes must match the NPN polarity, 50V rating, 100mA current, and 10kΩ/10kΩ resistor configuration. Verify pinout compatibility and thermal characteristics if replacing with components from other manufacturers.