DDTC114GE-7-F

Overview

The DDTC114GE-7-F is an NPN pre-biased small signal surface mount transistor manufactured by Diodes Incorporated. It features epitaxial planar die construction and includes a built-in biasing resistor (R2 only) with a nominal value of 10kΩ. The device operates within a collector-emitter voltage range of up to 50V and supports a continuous collector current of 100mA. Power dissipation is rated at 150mW, with a gain-bandwidth product of 250MHz. It is housed in an SOT-523 package and complies with AEC-Q101 standards for high reliability.

Feature Summary

• Epitaxial planar die construction
• Built-in biasing resistor (R2 only)
• Qualified to AEC-Q101 standards

Applications

• High reliability electronic circuits
• Surface mount applications requiring pre-biased transistors

Procurement Notes

Verify the component against the official datasheet DS30316 Rev. 9-2 to confirm specifications. Ensure the ordering suffix matches the required compliance and packaging details. Check for AEC-Q101 qualification status if automotive or high-reliability applications are intended. Confirm the R2 resistor tolerance and marking code align with design requirements.

Selection Notes

Select this component when an NPN pre-biased transistor with a single internal resistor is required. The 10kΩ R2 value suits specific biasing needs. Consider the SOT-523 package size for space-constrained designs. Verify thermal resistance and power dissipation limits relative to the operating environment.

Part Context

This part belongs to the DDTC (R2-only series) E family from Diodes Incorporated. It is designed as a complement to other types in the lineup. The series focuses on providing integrated biasing solutions in a compact surface mount format.

Replacement Considerations

Complementary PNP types such as DDTA are available within the same series. Verify pinout compatibility and electrical parameters before substitution. Ensure the replacement meets the same AEC-Q101 and RoHS requirements.