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The DDTC114GE-7 is an NPN pre-biased small signal surface mount transistor manufactured by Diodes Incorporated. It features epitaxial planar die construction and includes a built-in biasing resistor R2 with a nominal value of 10 kΩ. The device operates within a collector-emitter voltage (VCEO) range up to 50 V and supports a continuous collector current of 100 mA. Power dissipation is rated at 150 mW, with a junction-to-ambient thermal resistance of 833 °C/W. The gain-bandwidth product reaches 250 MHz, and the DC current transfer ratio (hFE) has a minimum value of 30 at IC = 5 mA. It is housed in an SOT-523 package.
Verify the specific ordering suffix against official documentation to confirm packaging details such as reel size and quantity per reel. Confirm compliance status including RoHS and halogen-free requirements before procurement. Ensure the component matches the required marking code for traceability. Check for any updates to the datasheet revision that may affect mechanical or electrical specifications.
Select this component when a single NPN pre-biased transistor with an internal pull-down resistor is required. Verify that the 10 kΩ nominal value of the built-in resistor aligns with the circuit design. Consider the SOT-523 package dimensions for PCB layout constraints. Ensure the operating temperature range of -55°C to +150°C meets the application environment requirements.
This part belongs to the DDTC (R2-ONLY SERIES) E family from Diodes Incorporated. It is designed as a surface mount solution for space-constrained applications. The series offers complementary PNP types available under the DDTA designation. The device utilizes a molded plastic case with a matte tin finish on terminals for solderability.
Check for direct equivalents in the same series with different resistor values if the 10 kΩ nominal value is not suitable. Verify pinout compatibility when substituting with similar pre-biased transistors from other manufacturers.