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The DDTC114GUA-7-F is an NPN pre-biased small signal surface mount transistor manufactured by Diodes Incorporated. It features epitaxial planar die construction and includes a built-in biasing resistor (R2 only) with a nominal value of 10 kΩ. The device operates within a collector-emitter voltage range of up to 50 V and supports a continuous collector current of 100 mA, with a power dissipation rating of 200 mW. Packaged in an SOT-323 case, it offers a gain-bandwidth product of 250 MHz and functions across a temperature range of -55°C to +150°C.
Verify the specific ordering suffix against official manufacturer documentation to confirm packaging details and compliance status. Ensure that the component meets all relevant environmental standards required for the intended application before finalizing procurement decisions.
Select this component when a compact NPN solution with integrated base resistance is needed. The SOT-323 package suits space-constrained designs. Confirm that the 10 kΩ internal resistor aligns with the drive requirements of the controlling logic source.
This part belongs to the DDTC1xxGUA series from Diodes Incorporated, which provides various resistor values for different biasing needs. All members share the same SOT-323 footprint and electrical characteristics, differing primarily in the nominal resistance value of the internal R2 component.
Direct replacements must match the NPN polarity, SOT-323 package, and 10 kΩ internal resistor. Verify that alternative parts meet the 50 V voltage rating and 100 mA current capacity specifications.
The DDTC114GUA contains a single built-in biasing resistor (R2) connected between the base and emitter terminals, eliminating the need for an external resistor.
The maximum junction and storage temperature for the DDTC114GUA is +150°C.
No, the DDTC114GUA is part of the R2-only series and contains only the emitter-base resistor (R2).