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The DDTC114TE-7-F is an NPN pre-biased transistor from the R1-only series, housed in a SOT523 surface-mount package. It integrates a single internal biasing resistor with a nominal value of 10 kΩ. The device supports a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. Power dissipation is rated at 150 mW, with an operating temperature range spanning from -55°C to +150°C. The component features a minimum DC current gain (hFE) of 100 and a transition frequency (fT) of 250 MHz.
Verify the part number against official Diodes Incorporated documentation to confirm compliance with RoHS 3 and REACH standards. Ensure that the ordering suffix matches the required packaging quantity and reel size specifications. Confirm that the manufacturing facility holds IATF 16949 certification if automotive qualification is necessary for the intended application.
Select this component when a single NPN transistor with a 10 kΩ base resistor is required in a compact SOT523 footprint. Consider the 50 V collector-emitter voltage rating and 100 mA current capacity for appropriate load driving. Verify thermal resistance requirements against the ambient temperature conditions of the target design environment.
This component belongs to the DDTC R1-only series manufactured by Diodes Incorporated. It is designed as a complementary counterpart to PNP types within the same family. The device utilizes molded plastic case material with a UL 94V-0 flammability rating. Moisture sensitivity is classified as Level 1 per J-STD-020 standards.
DDTC115TE-7-F
The typical input resistor (R1) value is 10 kΩ.
Yes, it is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities.
The power dissipation is rated at 150 mW when mounted on an FR-4 PC board with the minimum recommended pad layout.